Parts List/Tune Up Info

12
CC2642R
SWRS194G JANUARY 2018 REVISED APRIL 2020
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Specifications
Copyright © 2018–2020, Texas Instruments Incorporated
5.6 Power Consumption - Radio Modes
When measured on the CC26x2REM-7ID reference design with T
c
=2C,V
DDS
= 3.0 V with DC/DC enabled unless
otherwise noted.
PARAMETER TEST CONDITIONS TYP UNIT
Radio receive current 2440 MHz 6.9 mA
Radio transmit current
0 dBm output power setting
2440 MHz
7.3 mA
+5 dBm output power setting
2440 MHz
9.6 mA
(1) A full bank erase is counted as a single erase cycle on each sector
(2) Aborting flash during erase or program modes is not a safe operation.
(3) Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k
cycles
(4) Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum per
write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum number
of write operations per row is reached.
(5) This number is dependent on Flash aging and increases over time and erase cycles
5.7 Nonvolatile (Flash) Memory Characteristics
Over operating free-air temperature range and V
DDS
= 3.0 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Flash sector size 8KB
Supported flash erase cycles before failure, full bank
(1) (2)
30 k Cycles
Supported flash erase cycles before failure, single sector
(3)
60 k Cycles
Maximum number of write operations per row before sector
erase
(4)
83
Write
Operations
Flash retention 105 °C 11.4
Years at
105 °C
Flash sector erase current Average delta current 10.7 mA
Flash sector erase time
(5)
10 ms
Flash write current Average delta current, 4 bytes at a time 6.2 mA
Flash write time
(5)
4 bytes at a time 21.6 μs