User`s guide

What’s New xxxv

BSIM3 version 3 MOSFET model

The BSIM3

version 3 model, which was developed at U.C. Berkeley, is

a deep submicron MOSFET model with the same physical

basis as the BSIM3 version 2 model, but with several major

enhancements. These enhancements include:

• A single I-V expression to describe current and output

conductance in all regions of device operation.

• Better modeling of narrow width devices.

• A reformulated capacitance model to improve short

and narrow geometry models.

• A new relaxation time model to improve transient

modeling.

• Improved model fitting of various W/L ratios using

one parameter set.

BSIM3 version 3 retains the extensive built-in

dependencies of dimensional and processing parameters

of BSIM3 version 2.

To find out more, refer to

MOSFET devices in the

Analo

Devices

chapter of the online

icroSim PSpice A/D Reference

anual.