Data Sheet

NXP Semiconductors
BT136-600D
4Q Triac
BT136-600D All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 30 September 2013 4 / 13
T
mb
(°C)
- 50 1501000 50
003aae828
2
3
1
4
5
I
T(RMS)
(A)
0
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
003aae830
4
8
12
I
T(RMS)
(A)
0
surge duration (s)
10
- 2
10110
- 1
2
6
10
f = 50 Hz
T
mb
≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
003aae827
4
2
6
8
P
tot
(W)
0
I
T(RMS)
(A)
0 542 31
c
o
n
d
u
c
t
i
o
n
a
n
g
l
e
(d
e
g
re
e
s
)
f
o
r
m
f
a
c
t
o
r
a
3
0
6
0
9
0
1
2
0
1
8
0
4
2
.
8
2
.
2
1
.
9
1
.
5
7
α
α = 180°
120°
90°
60°
30°
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values