Data Sheet

ManualsBrandsConrad Components ManualsBattery Charger Assembly Kits197912 Charge controller Assembly kit 13.8 V DC 10 A

1/7September 2001

■ PROPAGATION DELAY TIME

= 60ns (Typ.) at V

= 10V

■ BUFFERED INPUTS AND OUTPUTS

■ STANDARDIZED SYMMETRICAL OUTPUT

CHARACTERISTICS

■ QUIESCENT CURRENT SPECIFIED UP TO

20V

■ 5V, 10V AND 15V PARAMETRIC RATINGS

■ INPUT LEAKAGE CURRENT

= 100nA (MAX) AT V

= 18V T

= 25°C

■ 100% TESTED FOR QUIESCENT CURRENT

■ MEETS ALL REQUIREMENTS OF JEDEC

JESD13B " STANDARD SPECIFICATIONS

FOR DESCRIPTION OF B SERIES CMOS

DEVICES"

DESCRIPTION

The HCF4011B is a monolithic integrated circuit

fabricated in Metal Oxide Semiconductor

technology available in DIP and SOP packages.

The HCF4011B QUAD 2 INPUT NAND GATE

provides the system designer with direct

implementation of the NAND function and

supplement the existing family of CMOS gates. All

inputs and outputs are buffered.

HCF4011B

QUAD 2 INPUT NAND GATE

PIN CONNECTION

ORDER CODES

PACKAGE TUBE T & R

DIP HCF4011BEY

SOP HCF4011BM1 HCF4011M013TR

DIP SOP

Summary of content (7 pages)

PAGE 1
HCF4011B QUAD 2 INPUT NAND GATE ■ ■ ■ ■ ■ ■ ■ ■ PROPAGATION DELAY TIME tPD = 60ns (Typ.
PAGE 2
HCF4011B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 2, 5, 6, 8, A, B, C, D, E, Data Inputs 9, 12, 13 F, G, H 3, 4, 10, 11 J, K, L, M Data Outputs VSS Negative Supply Voltage 7 VDD 14 Positive Supply Voltage TRUTH TABLE INPUTS LOGIC DIAGRAM OUTPUTS A, C, E, G B, D, F, H J, K, L, M L L H H L H L H H H H L ABSOLUTE MAXIMUM RATINGS Symbol VDD Parameter Supply Voltage VI DC Input Voltage II DC Input Current PD Value Unit -0.5 to +22 V -0.5 to VDD + 0.
PAGE 3
HCF4011B DC SPECIFICATIONS Test Condition Symbol IL VOH VOL VIH VIL IOH IOL II CI Parameter Quiescent Current High Level Output Voltage Low Level Output Voltage VI (V) Low Level Input Voltage Output Sink Current Input Leakage Current Input Capacitance |IO| VDD (µA) (V) 0/5 0/10 0/15 0/20 0/5 0/10 0/15 5/0 10/0 15/0 High Level Input Voltage Output Drive Current VO (V) 0/5 0/5 0/10 0/15 0/5 0/10 0/15 0/18 Value 0.5/4.5 1/9 1.5/13.5 4.5/0.5 9/1 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.
PAGE 4
HCF4011B TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT = ZOUT of pulse generator (typically 50Ω) WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle) 4/7
PAGE 5
HCF4011B Plastic DIP-14 MECHANICAL DATA mm. inch DIM. MIN. a1 0.51 B 1.39 TYP MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.
PAGE 6
HCF4011B SO-14 MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8° (max.
PAGE 7
HCF4011B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice.