Datasheet

TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
Page 2 of 3
SEMICONDUCTORS
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
∂JC
Junction to case thermal resistance ≤ 1.9
R
∂JA
Junction to free air thermal resistance ≤ 62.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings
Test Condition(s)
Min Typ Mx Unit
I
DRM
Repetitive peak off-
state current
V
D
= Rated V
DRM
, , I
G
= 0,
T
C
= 110°C
- - ±2 mA
V
supply
= +12 V†, R
L
= 10 Ω, t
p(g)
= > 20 µs
- 12 50
V
supply
= +12 V†, R
L
= 10 Ω, t
p(g)
= > 20 µs
- -19 -50
V
supply
= -12 V†, R
L
= 10 Ω, t
p(g)
= > 20 µs
- -16 -50
I
GT
Gate trigger current
V
supply
= -12 V†, R
L
= 10 Ω, t
p(g)
= > 20 µs
- 34 -
mA
V
supply
= +12 V†, R
L
= 10 Ω, t
p(g)
= > 20 µs
- 0.8 2
V
supply
= +12 V†, R
L
= 10 Ω, t
p(g)
= > 20 µs
- -0.8 -2
V
supply
= -12 V†, R
L
= 10 Ω, t
p(g)
= > 20 µs
- -0.8 -2
V
GT
Gate trigger voltage
V
supply
= -12 V†, R
L
= 10 Ω, t
p(g)
= > 20 µs
- 0.9 2
V
V
supply
= +12 V†, I
G
= 0,
initiating I
TM
= 100 mA
- 22 40
I
H
Holding current
V
supply
= -12 V†, I
G
= 0,
initiating I
TM
= -100 mA
- -22 -40
mA
V
supply
= +12 V† (seeNote5) - - 80
I
L
Latching current
V
supply
= -12 V† (seeNote5) - - -80
mA
V
TM
Peak on-state voltage I
TM
= ± 22.5 A, I
G
= 50 mA (see Note4) - ±1.4 ±1.7 V
dv/dt
Critical rate of rise of
off-state voltage
V
DRM
= Rated V
DRM
, I
G
= 0
T
C
= 110°C
- ±400 - V/µs
di/dt
Critical rate of rise of
off-state current
V
DRM
= Rated V
DRM
, I
GT
= 50 mA,
di
G
/dt = 50mA/µs, T
C
= 110°C
- ±100 - A/µs
dv/dt
©
Critical rise of
communication voltage
V
DRM
= Rated V
DRM
, I
T
= 1.4 I
T(RMS)
di/dt = 0.5 I
T(RMS)
/ms, T
C
= 80°C
±1.2 ±9 - V/µs
† All voltages are whit respect to Main Terminal 1.
Note 4: This parameters must be measured using pulse techniques, t
W
= ≤1ms, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body.
Note 5: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the
following characteristics : R
G
= 100Ω,
tp(g)
= 20 µs, t
r
= ≤ 15ns, f = 1 kHz.