Datasheet

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
2
 
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTE 5: This parameter must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
T
C
= 110°C 2 mA
I
RRM
Repetitive peak
reverse current
V
R
= rated V
RRM
I
G
= 0 T
C
= 110°C 2 mA
I
GT
Gate trigger current V
AA
= 12 V R
L
= 100
Ω
t
p(g)
≥
20
µ
s 8 20 mA
V
GT
Gate trigger voltage
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100Ω T
C
= - 40°C
2.5
V
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100Ω
0.8 1.5
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100Ω T
C
= 110°C
0.2
I
H
Holding current
V
AA
= 12 V
Initiating I
T
= 100 mA
T
C
= - 40°C
100
mA
V
AA
= 12 V
Initiating I
T
= 100 mA
40
V
T
On-state voltage I
T
=12A (see Note 5) 1.4 V
dv/dt
Critical rate of rise of
off-state voltage
V
D
= rated V
D
I
G
= 0 T
C
= 110°C 400 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 2.4 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W