Datasheet

TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
2
 
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTE 6: This parameter must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
R
GK
= 1 kΩ T
C
= 110°C 400 µA
I
RRM
Repetitive peak
reverse current
V
R
= rated V
RRM
I
G
= 0 T
C
= 110°C 1 mA
I
GT
Gate trigger current V
AA
= 12 V R
L
= 100
Ω
t
p(g)
≥
20
µ
s 5 200
µ
A
V
GT
Gate trigger voltage
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100Ω
R
GK
=1kΩ
T
C
= - 40°C
1.2
V
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100Ω
R
GK
=1kΩ
0.4 0.6 1
V
AA
= 12 V
t
p(g)
≥ 20 µs
R
L
= 100Ω
R
GK
=1kΩ
T
C
= 110°C
0.2
I
H
Holding current
V
AA
= 12 V
Initiating I
T
= 10 mA
R
GK
=1kΩ T
C
= - 40°C
8
mA
V
AA
= 12 V
Initiating I
T
= 10 mA
R
GK
=1kΩ
5
V
T
Peak on-state
voltage
I
T
= 5 A (See Note 6) 1.7 V
dv/dt
Critical rate of rise of
off-state voltage
V
D
= rated V
D
R
GK
=1kΩ T
C
= 110°C 10 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 3.5 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W