Datasheet

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors BDT81/83/85/87
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BDT81 60
BDT83 80
BDT85 100
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT87
I
C
= 30mA; I
B
= 0
120
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage I
C
= 5A; I
B
= 0.5A B 1.0 V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage I
C
= 7A; I
B
= 0.7A B 1.6 V
V
BE
(on)
Base-Emitter On Voltage I
C
= 5A ; V
CE
= 4V 1.5 V
I
CES
Collector Cutoff Current V
CE
= 0.8V
CBOmax
; V
BE
= 0 1 mA
I
CBO
Collector Cutoff Current V
CB
= V
CBOmax
; I
E
= 0 0.2 mA
I
EBO
Emitter Cutoff Current V
EB
= 7V; I
C
= 0 0.1 mA
h
FE-1
DC Current Gain I
C
= 50mA ; V
CE
= 10V 40
h
FE-2
DC Current Gain I
C
= 5A ; V
CE
= 4V 40
f
T
Current-Gain—Bandwidth Product I
C
= 0.5A ; V
CE
= 10V 10 MHz
Switching Times
t
on
Turn-On Time 1 μs
t
off
Turn-Off Time
I
C
= 7A; I
B1
= -I
B2
= 0.7A
2 μs
isc Website：www.iscsemi.cn