Datasheet

BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
2
MAY 1993 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA I
B
= 0 (see Note 5)
BD646
BD648
BD650
BD652
-60
-80
-100
-120
V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BD646
BD648
BD650
BD652
-0.5
-0.5
-0.5
-0.5
mA
I
CBO
Collector cut-off
current
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
V
CB
= -70 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V I
C
= 0 (see Notes 5 and 6) -5 mA
h
FE
Forward current
transfer ratio
V
CE
= -3 V I
C
= -3 A (see Notes 5 and 6) 750
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -12 mA
I
B
= -50 mA
I
C
= -3 A
I
C
= -5 A
(see Notes 5 and 6)
-2
-2.5
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= -50 mA I
C
= -5 A (see Notes 5 and 6) -3 V
V
BE(on)
Base-emitter
voltage
V
CE
= -3 V I
C
= -3 A (see Notes 5 and 6) -2.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 2.0 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W