Datasheet

ELECTRICAL CHARACTERISTICS (T
amb
=25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cutoff Current (I
E
=0) V
CB
=90V
V
CB
=90V T
amb
=150°C
10
10
nA
µA
I
EBO
Emitter Cutoff Current (I
C
=0) V
EB
=5V 10 nA
V
(BR)CBO
Collector-base Breakdown
Voltage (I
E
=0)
I
C
=100µA 140 V
V
(BR)CEO
* Collector-emitter Breakdown
Voltage (I
B
=0)
I
C
=30mA 80 V
V
(BR)EBO
Emitter-base Breakdown Voltage
(I
C
=0)
I
E
=100µA7V
V
CE(sat)
* Collector-emitter Saturation
Voltage
I
C
=150mA
I
C
=500mA
I
B
=15mA
I
B
=50mA
0.2
0.5
V
V
V
BE(sat)
* Base-emitter Saturation Voltage I
C
= 150 mA I
B
= 15 mA 1.1 V
h
FE
* DC Current Gain
I
C
= 0.1 mA
I
C
=10mA
I
C
=150mA
I
C
=500mA
I
C
=1A
I
C
=150mA
T
amb
=– 55°C
V
CE
=10V
V
CE
=10V
V
CE
=10V
V
CE
=10V
V
CE
=10V
V
CE
=10V
50
90
100
50
15
40
300
h
fe
Small Signal Current Gain I
C
=1mA
f = 1 kHz
V
CE
=5V
80 400
f
T
Transition Frequency I
C
=50mA
f = 20 MHz
V
CE
=10V
100 MHz
C
EBO
Emitter-base Capacitance I
C
=0
f=1MHz
V
EB
= 0.5 V
60 pF
C
CBO
Collector-base Capacitance I
E
=0
f=1MHz
V
CB
=10V
12 pF
r
bb’
C
b’c
Feedback Time Constant I
C
=10mA
f=4MHz
V
CB
=10V
25 400 ps
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
THERMAL DATA
R
th j-case
R
th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
97
350
°C/W
°C/W
2N3700
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