Datasheet

ManualsBrandsComset Semiconductors ManualsDiscrete SemiconductorsSmall Signal Transistor TO-18

2N3700

January 1989

GENERAL PURPOSE AMPLIFIERS

The 2N3700 is a silicon planar epitaxial NPN tran-

sistorin Jedec TO-18 metal case, intended for small

signal, low noise industrial applications.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

CBO

Collector-base Voltage (I

=0) 140 V

CEO

Collector-emitter Voltage (I

=0) 80 V

EBO

Emitter-base Voltage (I

=0) 7 V

Collector Current 1 A

tot

Total Power Dissipation at T

amb

≤ 25 °C

at T

case

≤ 25 °C

at T

case

≤ 100 °C

0.5

1.8

stg

Storage and Junction Temperature – 65 to 200 °C

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

TO-18

1/4

Summary of content (5 pages)

PAGE 1
2N3700 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-base Voltage (I E = 0) 140 V V CEO Collector-emitter Voltage (I B = 0) 80 V V EBO Emitter-base Voltage (I C = 0) 7 V Collector Current 1 A 0.5 1.
PAGE 2
N3700 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 97 350 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter I CBO Collector Cutoff Current (I E = 0) V CB = 90 V V CB = 90 V I E BO Emitter Cutoff Current (I C = 0) V EB = 5 V V (B R)CBO Collector-base Breakdown Voltage (I E = 0) I C = 100 µA 140 V V (BR)CE O * Collector-emitter Breakdown Voltage (I B = 0) I C = 30 mA 80
PAGE 3
2N3700 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.
PAGE 4
2N3700 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice.
PAGE 5
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