Datasheet

THERMAL DATA
TO-39 TO-18
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
50
250
83.3
375
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -50 V
V
CB
= -50 V T
j
= 150
o
C
-10
-10
nA
µA
I
CEX
Collector Cut-off
Current (V
BE
= 0.5V)
V
CE
= -30 V -50 nA
I
BEX
Base Cut-off Current
(V
BE
= 0.5V)
V
CE
= -30 V -50 nA
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -10 µA
-60 V
V
(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA -60 V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= -10 µA
-5 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-0.4
-1.6
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-1.3
-2.6
V
V
h
FE
∗ DC Current Gain I
C
= -0.1 mA V
CE
= -10 V
I
C
= -1 mA V
CE
= -10 V
I
C
= -10 mA V
CE
= -10 V
I
C
= -150 mA V
CE
= -10 V
I
C
= -500 mA V
CE
= -10 V
75
100
100
100
50
300
f
T
Transition Frequency V
CE
= -20 V f = 100 MHz
I
C
= -50 mA
200 MHz
C
EBO
Emitter-Base
Capacitance
I
C
= 0 V
EB
= -2 V f = 1MHz 30 pF
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= -10 V f = 1MHz 8 pF
t
d
∗∗ Delay Time V
CC
= -30 V I
C
= -150 mA
I
B1
= -15 mA
10 ns
t
r
∗∗ Rise Time V
CC
= -30 V I
C
= -150 mA
I
B1
= -15 mA
40 ns
t
s
∗∗ Storage Time V
CC
= -6 V I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
80 ns
t
f
∗∗ Fall Time V
CC
= -6 V I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
30 ns
t
on
∗∗ Turn-on Time V
CC
= -30 V I
C
= -150 mA
I
B1
= -15 mA
45 ns
t
off
∗∗ Turn-off Time V
CC
= -6 V I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
100 ns
* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
** See test circuit
2N2905A/2N2907A
2/7