Datasheet

1997 May 30 4
Philips Semiconductors Product specification
PNP switching transistors 2N2907; 2N2907A
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current
2N2907 I
E
= 0; V
CB
= −50 V −−20 nA
I
E
= 0; V
CB
= −50 V; T
amb
= 150 °C −−20 µA
I
CBO
collector cut-off current
2N2907A I
E
= 0; V
CB
= −50 V −−10 nA
I
E
= 0; V
CB
= −50 V; T
amb
= 150 °C −−10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5V −−50 nA
h
FE
DC current gain V
CE
= −10 V
2N2907 I
C
= −0.1 mA 35 −
I
C
= −1mA 50 −
I
C
=−10 mA 75 −
I
C
= −150 mA; note 1 100 300
I
C
= −500 mA; note 1 30
h
FE
DC current gain V
CE
= −10 V
2N2907A I
C
= −0.1 mA 75 −
I
C
= −1 mA 100 −
I
C
= −10 mA 100 −
I
C
= −150 mA; note 1 100 300
I
C
= −500 mA; note 1 50 −
V
CEsat
collector-emitter saturation voltage I
C
= −150 mA; I
B
= −15 mA; note 1 −400 mV
I
C
= −500 mA; I
B
= −50 mA; note 1 −1.6 V
V
BEsat
base-emitter saturation voltage I
C
= −150 mA; I
B
= −15 mA; note 1 −1.3 V
I
C
= −500 mA; I
B
= −50 mA; note 1 −2.6 V
C
c
collector capacitance I
E
=i
e
= 0; V
CB
= −10 V; f = 1 MHz − 8pF
C
e
emitter capacitance I
C
=i
c
= 0; V
EB
= −2 V; f = 1 MHz − 30 pF
f
T
transition frequency I
C
= −50 mA; V
CE
= −20 V; f = 100 MHz;
note 1
200 − MHz
Switching times (between 10% and 90% levels); see Fig.2
t
on
turn-on time I
Con
= −150 mA; I
Bon
= −15 mA; I
Boff
=15mA − 45 ns
t
d
delay time − 15 ns
t
r
rise time − 35 ns
t
off
turn-off time − 300 ns
t
s
storage time − 250 ns
t
f
fall time − 50 ns