Datasheet

1997 May 30 3
Philips Semiconductors Product specification
PNP switching transistors 2N2907; 2N2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−60 V
V
CEO
collector-emitter voltage open base; I
C
<−100 mA
2N2907 −−40 V
2N2907A −−60 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−600 mA
I
CM
peak collector current −−800 mA
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 400 mW
T
case
≤ 25 °C − 1.2 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 200 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 438 K/W
R
th j-c
thermal resistance from junction to case 146 K/W