Datasheet

1997 May 30 2
Philips Semiconductors Product specification
PNP switching transistors 2N2907; 2N2907A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case
Fig.1 Simplified outline (TO-18) and symbol.
handbook, halfpage
MAM263
1
3
2
3
1
2
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−60 V
V
CEO
collector-emitter voltage open base
2N2907 −−40 V
2N2907A −−60 V
I
C
collector current (DC) −−600 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 400 mW
h
FE
DC current gain I
C
= −150 mA; V
CE
= −10 V 100 300
f
T
transition frequency I
C
= −50 mA; V
CE
= −20 V; f = 100 MHz 200 − MHz
t
off
turn-off time I
Con
= −150 mA; I
Bon
= −15 mA; I
Boff
=15mA − 300 ns