Instruction Manual

ManualsBrandsCommunication Concepts ManualsHardware2N5194

October, 2006 − Rev. 12

1 Publication Order Number:

2N5194/D

2N5194, 2N5195

Preferred Devices

Silicon PNP Power

Transistors

These devices are designed for use in power amplifier and switching

circuits; excellent safe area limits. Complement to NPN 2N5191,

2N5192.

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol 2N5194 2N5195 Unit

Collector−Emitter Voltage V

CEO

60 80 Vdc

Collector−Base Voltage V

60 80 Vdc

Emitter−Base Voltage V

5.0 Vdc

Collector Current I

4.0 Adc

Base Current I

1.0 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

320

W/°C

Operating and Storage Junction

Temperature Range

, T

stg

–65 to +150 °C/W

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case

3.12 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

4 AMPERE

POWER TRANSISTORS

PNP SILICON

60 − 80 VOLTS

MARKING DIAGRAM

TO−225AA

CASE 77−09

STYLE 1

Y = Year

WW = Work Week

2N519x = Device Code

x = 4 or 5

G = Pb−Free Package

2N5195 TO−225 500 Units / Bulk

2N5195G TO−225

(Pb−Free)

500 Units / Bulk

Device Package

Shipping

2N5194 TO−225 500 Units / Bulk

2N5194G TO−225

(Pb−Free)

500 Units / Bulk

ORDERING INFORMATION

YWW

N519xG

Summary of content (6 pages)

PAGE 1
2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.
PAGE 2
N5194, 2N5195 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î
PAGE 3
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 2N5194, 2N5195 2.0 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 TJ = 25°C 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 2.0 TJ = 25°C 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT ( A) μ + 1.0 + 0.5 *qVC for VCE(sat) 0 − 0.5 − 1.0 qVB for VBE − 1.5 − 2.0 − 2.
PAGE 4
2N5194, 2N5195 VCC TURN−ON PULSE VBE(off) Vin 0 TJ = 25°C Vin RB SCOPE 300 Cjd << Ceb t1 APPROX + 9.0 V t2 + 4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS Vin APPROX −11 V 500 CAPACITANCE (pF) APPROX −11 V RC t3 TURN−OFF PULSE 200 Ceb 100 Ccb 70 t1 ≤ 7.0 ns 100 < t2 < 500 ms t3 < 15 ns DUTY CYCLE ≈ 2.0% 50 0.1 0.2 0.3 0.5 tr @ VCC = 10 V 0.3 0.2 0.1 0.07 0.05 td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.05 0.07 0.1 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 0.03 0.
PAGE 5
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5194, 2N5195 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 qJC(max) = 3.12°C/W 0.2 0.1 0.05 0.02 SINGLE PULSE 0.02 0.03 0.01 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 12. Thermal Response DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model shown in Figure 13.
PAGE 6
2N5194, 2N5195 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.