User Manual

MRFE6VP61K25HR6 MRFE6VP61K25HSR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
10
2000
02010
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
C
iss
1000
100
40
C
oss
Measured with '30 mV(rms)ac @ 1 MHz
V
GS
=0Vdc
Note: Each side of device measured separately.
1
59
66
35
P
in
, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Output Power versus
Input Power
64
36 37 38 39 40 41 42
P
out
, OUTPUT POWER (dBm) PULSED
63
60
Actual
Ideal
V
DD
=50Vdc,I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle
P1dB = 61.3 dBm
(1333 W)
62
61
65
P3dB = 61.9 dBm (1553 W)
P2dB = 61.7 dBm (1472 W)
26
30
90
100
24
70
50
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
"
D,
DRAIN EFFICIENCY (%)
22
20
2000
21
40
60
80
23
25
16
23
0
20
19
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
200
18
1400 1600
V
DD
=50Vdc,I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle
17
400 800 1000 1200
V
DD
=30V
50 V
21
22
25
24
26
600
35 V
40 V
45 V
20
90
0
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Drain Efficiency versus
Output Power
70
200 400 600 800 1000 1200 1400
60
30
50
40
80
1600
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
P
out
, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
19
21
20
100 2000
"
D
25_C
T
C
=--30_C
85_C
G
ps
V
DD
=50Vdc,I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle
40
60
50
20
30
"
D
, DRAIN EFFICIENCY (%)
-- 3 0 _C
25_C
85_C
V
DD
=50Vdc,I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle
V
DD
=30V
50 V
35 V
40 V
45 V
"
D,
DRAIN EFFICIENCY (%)
24
23
22
26
25
70
80
90
C
rss
1000
"
D
G
ps
V
DD
=50Vdc,I
DQ
= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle
20001000