User Manual

2
RF Device Data
Freescale Semiconductor
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
Table 3. ESD Protection Characteristics
Test Methodology Class
Human B ody Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) B (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (T
A
=25$C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
(1)
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 #Adc
Drain--Source Breakdown Voltage
(V
GS
=0Vdc,I
D
= 100 mA)
V
(BR)DSS
125 — — Vdc
Zero Gate Voltage Drain Leakage Current
(V
DS
=50Vdc,V
GS
=0Vdc)
I
DSS
— — 10 #Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
=0Vdc)
I
DSS
— — 20 #Adc
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
=10Vdc,I
D
= 1776 #Adc)
V
GS(th)
1.7 2.2 2.7 Vdc
Gate Quiescent Voltage
(V
DD
=50Vdc,I
D
= 100 mAdc, Measured in Functional Test)
V
GS(Q)
1.4 2.2 2.9 Vdc
Drain--Source On--Voltage
(1)
(V
GS
=10Vdc,I
D
=2Adc)
V
DS(on)
— 0.15 — Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
=50Vdc' 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
rss
— 2.8 — pF
Output Capacitance
(V
DS
=50Vdc' 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
oss
— 185 — pF
Input Capacitance
(V
DS
=50Vdc,V
GS
=0Vdc' 30 mV(rms)ac @ 1 MHz)
C
iss
— 562 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
=50Vdc,I
DQ
= 100 mA, P
out
= 1250 W Peak (250 W Avg.), f = 230 MHz,
Pulsed, 100 #sec Pulse Width, 20% Duty Cycle
Power G ain
G
ps
23.0 24.0 26.0 dB
Drain Efficiency "
D
72.5 74.0 — %
Input Return Loss IRL — -- 1 4 -- 1 0 dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) V
DD
=50Vdc,I
DQ
= 100 mA, P
out
= 1250 W Peak
(250 W Avg.), f = 230 MHz, Pulsed, 100 #sec Pulse Width, 20% Duty Cycle
Load Mismatch
(VSWR 65:1 at all Phase Angles)
( No Degradation in Output Power
1. Each side of device measured separately.