User's Manual

GSM/EDGE Dual Amplifier Booster
CCI Model Number DAB-1819-125-G2
USER’S GUIDE
Product Description:
DAB-1819-125-G2 Dual Amplifier Booster:
The CCI GSM Dual Amplifier-Booster Module (DAB) consists of two linear power
amplifiers with intermodulation level control circuitry, each capable of generating a
125 Watt GSM/EDGE signal.
Operation Description:
The DAB-1819-125-G2 Dual Amplifier Booster is designed to supply a nominal
output power level of 125 Watts (51 dBm) per channel. Although the gain of the Dual
Amplifier Booster is fixed, the output can be adjusted by setting the input power level.
Operation and Installation Instructions:
The following instructions should be followed when installing the unit in service:
• Apply a 29-33VDC input voltage to the DC Input connector of the Dual
Amplifier-Booster Module.
• Insure that the DC Source is capable of delivering up to 30 Amps at 31VDC.
• Apply a GSM/EDGE signal of up to +40dBm to each RF input port of the Dual
Amplifier-Booster Module.
• The Dual Amplifier-Booster Module will provide approximately 11dB or less of
RF Gain.
• Check the RF output to insure the proper output power is present.
{Approximately 125 Watts (51dBm) per channel}.
• Adjust the input power level to insure the output power level is in compliance
with the values indicated in the table on page 2.
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