Technical information

Easy Automotive Modules
Evaluation Kit EASYKIT AUX DRIVES (FS50R07W1E3_B11A)
Experimental Results
Application Note 40 AN2012-10
Evaluation Kit EASYKIT AUX DRIVES (FS50R07W1E3_B11A)
Figure 31 Diode turn-off at 300V, 25A and Tvj=150°C. Vge=+15V/0V with Rg,on=2.2Ω.
Table 3 Measurement results during Diode turn-off (300V, 25A, 150°C)
Symbol
Unit
Value
Description
Irm
A
35
Reverse recovery peak current
Erec
mJ
0.38
Turn-off energy loss per pulse: 10% Vf to 2% Irm
di/dt
kA/us
1.49
Current slew rate: 50% If to 50% Irm
Qrr
uC
2.21
Reverse recovery charge (int(Irm) min value to 2%Irm)
trr
ns
145
Reverse recovery time 10% Irm to 10%Irm
6.3.3 IGBT Turn-off (450V, 100A, 25°C)
The Evaluation Kit does not use anly clamping circuits to limit Vce overshoots. Therefore, an IGBT turn-off
pulse at low temperature, max DCL voltage and collector current for switching operation has to be tested.
Figure 32 shows the measured waveforms of this IGBT turn-off event. The voltage did not exceed 550V. The
low current capability of the gate driving circuit and the unipolar supply had the disadvantage of higher
switching energies. However, this test at high DCL voltage and collector current shows that active clamping
measures to limit Vce voltage overshoots are not necessary in this Evaluation Kit.
Please take note that the overshoot characteristics strongly depends on many system parameters (PCB
layout, DCL-capacitor, gate driving circuits, temperature,…) . These results in the Evaluation Kit should not
be regarded as a general recommendation against active clamping measures.
-60
-40
-20
0
20
40
time [ns]
IL [A]; If [A]
0
100
200
300
400
500
-Vf [V]
0 100 200 300 400 500 600 700
-100
0
100
200
300
400
500
Erec [uJ]