Specifications
Table Of Contents
- Contents
- Tables
- Figures
- 1 Introduction
- 2 Interface Characteristics
- 2.1 Application Interface
- 2.2 RF Antenna Interface
- 2.3 Sample Application
- 3 Operating Characteristics
- 3.1 Operating Modes
- 3.2 Power Up/Power Down Scenarios
- 3.3 Power Saving
- 3.4 Power Supply
- 3.5 Operating Temperatures
- 3.6 Electrostatic Discharge
- 3.7 Blocking against RF on Interface Lines
- 3.8 Reliability Characteristics
- 4 Mechanical Dimensions, Mounting and Packaging
- 5 Regulatory and Type Approval Information
- 6 Document Information
- 7 Appendix
Cinterion
®
ELS81-US Hardware Interface Description
2.1 Application Interface
53
els81-us_hid_v01.004 2017-09-27
Confidential / Preliminary
Page 32 of 107
2.1.6.1 Enhanced ESD Protection for SIM Interface
To optimize ESD protection for the SIM interface it is possible to add ESD diodes to the SIM
interface lines as shown in the example given in Figure 11.
1
The example was designed to meet ESD protection according ETSI EN 301 489-1/7: Contact
discharge: ± 4kV, air discharge: ± 8kV.
Figure 11: SIM interface - enhanced ESD protection
1. Note that the protection diode shall have low internal capacitance less than 5pF for IO and CLK.
CCRST
CCCLK
CCIO
CCVCC
CCIN
GND
123
654
SIM_RST
SIM_CLK
SIM_IO
SIM_VCC
SIM_DET
Module