User's Manual

3.4 Introduction To Servicing
M889-00
02/10/95 Copyright TEL
3.1.3 Caution: Beryllium Oxide & Power Transistors
The RF power transistors in current use all contain some beryllium oxide. This sub-
stance, while perfectly harmless in its normal solid form, can become a severe health
hazard when it has been reduced to dust. For this reason the RF power transistors
should not be broken open, mutilated, filed, machined, or physically damaged in any
way that can produce dust particles.