User guide

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Document Number: 94656
2 Revision: 18-Dec-08
VSKU105.., VSKV105.. Series
Vishay High Power Products
ADD-A-PAK Generation VII Power Modules
Thyristor/Thyristor, 105 A
ELECTRICAL SPECIFICATIONS
Notes
(1)
I
2
t for time t
x
= I
2
√t x √t
x
(2)
Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3)
16.7 % x π x I
AV
< I < π x I
AV
(4)
I > π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM,
I
DRM
AT 130 °C
mA
VSK.105
04 400 500 400
15
08 800 900 800
12 1200 1300 1200
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
180° conduction, half sine wave,
T
C
= 85 °C
105
A
Maximum continuous RMS on-state current I
T(RMS)
DC 165
T
C
78 °C
Maximum peak, one-cycle non-repetitive
on-state current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
2000
A
t = 8.3 ms 2094
t = 10 ms
100 % V
RRM
reapplied
1682
t = 8.3 ms 1760
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
Initial T
J
=
T
J
maximum
20
kA
2
s
t = 8.3 ms 18.26
t = 10 ms
100 % V
RRM
reapplied
14.14
t = 8.3 ms 12.91
Maximum I
2
√t for fusing I
2
√t
(1)
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
200 kA
2
√s
Maximum value of threshold voltage V
T(TO)
(2)
Low level
(3)
T
J
= T
J
maximum
0.98
V
High level
(4)
1.12
Maximum value of on-state
slope resistance
r
t
(2)
Low level
(3)
T
J
= T
J
maximum
2.7
mΩ
High level
(4)
2.34
Maximum on-state voltage drop V
TM
I
TM
= π x I
T(AV)
T
J
= 25 °C 1.8 V
Maximum non-repetitive rate of rise of
turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
= π x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 µs, t
p
> 6 µs
150 A/µs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
250
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400