User Manual

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Document Number: 94423
6 Revision: 24-Apr-08
VSKU/V105..PbF Series
Vishay High Power Products
Thyristor/Thyristor, 105 A
(ADD-A-PAK
TM
Generation 5 Power Modules)
Fig. 10 - Current Ratings Characteristics Fig. 11 - Current Ratings Characteristics
Fig. 12 - Thermal Impedance Z
thJC
Characteristics
Fig. 13 - Gate Characteristics
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 100
100 A
50 A
Ra te Of Fall Of On-state Current - d i/ dt (A/ µs)
Maximum Reverse Recovery Charge - Qrr (µC)
I = 200 A
TM
20 A
10 A
VSK.105.. Se ries
T = 1 2 5 ° C
J
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Rec overy Curre nt - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
100 A
50 A
I = 200 A
TM
20 A
10 A
VSK.105.. Se rie s
T = 1 2 5 ° C
J
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq ua re Wa ve Pulse Dura t ion (s)
thJC
Tr a n si e n t Th e r m a l I m p e d a n c e Z ( K/ W )
VSK.105.. Se rie s
Per Junction
Steady State Value:
R = 0.27 K/ W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
(4)
(3)
(2) (1)
Inst ant a neo us Ga t e C urre nt (A)
Instantaneous Gate Voltage (V)
TJ = - 40 ° C
TJ = 2 5 ° C
T
J = 125 °C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rat ed d i/ dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/d t: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
Rectangular gate pulse
VSK.105.. Series