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VSKDS220/030 www.vishay.
VSKDS220/030 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) 50 % duty cycle at TC = 110 °C, rectangular waveform 110 Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 15 A, L = 1 mH 99 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.
VSKDS220/030 Vishay Semiconductors 1000 10 000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C 10 TJ = 125 °C TJ = 25 °C 1 1000 150 °C 125 °C 100 100 °C 10 75 °C 50 °C 1 25 °C 0.1 0.01 0.0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
VSKDS220/030 Vishay Semiconductors 100 160 Square wave (D = 0.50) 80 % rated VR applied 140 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com 120 100 DC 80 60 40 20 80 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 60 RMS limit 40 DC 20 see note (1) 0 0 0 50 100 150 200 250 0 300 20 40 60 80 100 120 140 160 180 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig.
VSKDS220/030 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS KD S 22 0 1 2 3 4 5 / 1 - Vishay Semiconductors product 2 - Circuit configuration: 030 6 KD = ADD-A-PAK - 2 diodes in series 3 - S = Schottky diode 4 - Average rating (x 10) 5 - Product silicon identification 6 - Voltage rating (030 = 30 V) CIRCUIT CONFIGURATION (1) ~ (2) + (3) - LINKS TO RELATED DOCUMENTS Dimensions Revision: 05-Jan-12 www.vishay.
Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 24 ± 0.5 (1 ± 0.020) 6.7 ± 0.3 (0.26 ± 0.012) Viti M5 x 0.8 Screws M5 x 0.8 Document Number: 95369 Revision: 11-Nov-08 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.
VISHAY SEMICONDUCTORS Modules Application Note Mounting Instructions for ADD-A-PAK Generation VII Generation VII ADD-A-PAK (AAP) power modules combine the excellent thermal performance enabled by a direct bonded copper (Al2O3) substrate, superior mechanical ruggedness, and an environmentally friendly manufacturing process that eliminates the use of hard molds, thus reducing direct stresses on the leads. To prevent axial pull-out, the electrical terminals are co-molded to the module housing.
Application Note Vishay Semiconductors Mounting Instructions for ADD-A-PAK Generation VII Next, make a uniform coating on the heatsink mounting surfaces and module substrate with a good quality thermal compound. Screen printing of the compound is recommended, as well as direct application through a roller or spatula. The datasheet values for thermal resistance assume a uniform layer of thermal compound with a maximum thickness of 0.08 mm. The thermal conductivity of the compound should be no less than 0.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
