Instruction Manual
Document Number: 94422 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 03-Jun-08 5
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK
TM
Power Modules), 200 A
Vishay High Power Products
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
3000
4000
5000
6000
7000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
VSK.F200.. Se ries
Pe r Ju n c t i o n
Initia l T = 125°C
@ 6 0 Hz 0 . 0 0 8 3 s
@ 5 0 Hz 0 . 0 1 0 0 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
J
3000
4000
5000
6000
7000
8000
0.01 0.1 1
Peak Half Sine Wave On-sta te Current (A)
Pu lse Tra in Du ra t io n ( s)
Maximum Non Rep etitive Surge Current
Versus Pulse Train Duration. Control
Of Conduc tion Ma y Not Be Ma inta ined.
VSK.F200.. Series
Pe r Ju n c t io n
Init ia l T = 125°C
No Vo ltag e Reap plied
Ra t e d V Re a p p l ie d
RRM
J
100
1000
10000
1234567
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Inst a nt a ne o us O n-st a te Vo lt a g e (V)
VSK.F200.. Se ries
Pe r Ju n c ti o n
T = 1 2 5 ° C
J
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Transient Thermal Impedanc e Z (K/ W)
Steady State Value:
R = 0.125 K/ W
(DC Operation)
VSK.F200.. Series
Pe r Ju n c t i o n
thJC
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
300 A
200 A
100 A
500 A
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forwa rd Current - di/ d t (A/ µs)
I = 1000 A
VSK.F200.. Se rie s
T = 1 2 5 ° C
TM
J
30
60
90
120
150
180
10 20 30 40 50 60 70 80 90 100
500A
300A
200A
100A
Ma ximum Re verse Rec overy Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
VSK.F200.. Series
T = 1 2 5 ° C
I = 1000A
J
TM