User guide

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Document Number: 94418
2 Revision: 22-Apr-08
VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK
TM
Generation 5 Power Modules), 27 A
ELECTRICAL SPECIFICATIONS
Notes
(1)
I
2
t for time t
x
= I
2
√t x √t
x
(2)
Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3)
16.7 % x π x I
AV
< I < π x I
AV
(4)
I > π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM,
I
DRM
AT 125 °C
mA
VSK.26
04 400 500 400
15
06 600 700 600
08 800 900 800
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
(thyristors)
I
T(AV)
180° conduction, half sine wave,
T
C
= 85 °C
27
A
Maximum average forward current
(diodes)
I
F(AV)
Maximum continuous RMS on-state current
as AC switch
I
O(RMS)
60
Maximum peak, one-cycle
non-repetitive on-state
or forward current
I
TSM
or
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
400
t = 8.3 ms 420
t = 10 ms
100 % V
RRM
reapplied
335
t = 8.3 ms 350
t = 10 ms
T
J
= 25 °C, no voltage reapplied
470
t = 8.3 ms 490
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
Initial T
J
= T
J
maximum
800
A
2
s
t = 8.3 ms 730
t = 10 ms
100 % V
RRM
reapplied
560
t = 8.3 ms 510
t = 10 ms
T
J
= 25 °C, no voltage reapplied
1100
t = 8.3 ms 1000
Maximum I
2
√t for fusing I
2
√t
(1)
t = 0.1 to 10 ms, no voltage reapplied
8000 A
2
√s
Maximum value or threshold voltage V
T(TO)
(2)
Low level
(3)
T
J
= T
J
maximum
0.92
V
High level
(4)
0.95
Maximum value of on-state
slope resistance
r
t
(2)
Low level
(3)
T
J
= T
J
maximum
12.11
mΩ
High level
(4)
11.82
Maximum peak on-state or forward voltage
V
TM
I
TM
= π x I
T(AV)
T
J
= 25 °C 1.95 V
V
FM
I
FM
= π x I
F(AV)
Maximum non-repetitive rate of
rise of turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
= π x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 µs, t
p
> 6 µs
150 A/µs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400
or
I
(RMS)
I
(RMS)