Instruction Manual

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Document Number: 94418
6 Revision: 22-Apr-08
VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAK
TM
Generation 5 Power Modules), 27 A
Fig. 10 - On-State Voltage Drop Characteristics
Fig. 11 - Thermal Impedance Z
thJC
Characteristics
Fig. 12 - Gate Characteristics
1
10
100
1000
01234567
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Inst a nt a neo us On-st a te Vo lt a g e (V)
T = 1 2 5 ° C
J
VSK.26.. Se rie s
Pe r Ju n c t io n
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
Steady State Value:
R = 0.62 K/W
(DC Operation)
thJC
thJC
Transient Thermal Impedance Z (K/W)
VSK.26. . Se rie s
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b )
(a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, t p = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = -40 °C
T
J = 25 °C
TJ = 1 2 5 ° C
a)Recommended load line for
b)Recommended load line for
VGD
IGD
Fre q u e n c y Lim it e d b y PG ( A V )
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, t p >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
VSK.26.. Se rie s