User guide

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Document Number: 94417
2 Revision: 08-Oct-09
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
/I
DRM
AT 130 °C
MAXIMUM
mA
VSK.170-
04 400 500
50
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
VSK.250-
04 400 500
50
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
60
20 2000 2100
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
170 250 A
85 85 °C
Maximum RMS on-state current I
T(RMS)
As AC switch 377 555
A
Maximum peak, one-cycle on-state
non-repetitive, surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
5100 8500
t = 8.3 ms 5350 8900
t = 10 ms
100 % V
RRM
reapplied
4300 7150
t = 8.3 ms 4500 7500
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
131 361
kA
2
s
t = 8.3 ms 119 330
t = 10 ms
100 % V
RRM
reapplied
92.5 255
t = 8.3 ms 84.4 233
Maximum I
2
√t for fusing I
2
√t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 kA
2
√s
Low level value or threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
),
T
J
= T
J
maximum
0.89 0.97
V
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 1.12 1.00
Low level value on-state slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
),
T
J
= T
J
maximum
1.34 0.60
mΩ
High level value on-state slope resistance r
t2
(I > π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.96 0.57
Maximum on-state voltage drop V
TM
I
TM
= π x I
T(AV)
, T
J
= T
J
maximum, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
1.60 1.44 V
Maximum holding current I
H
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C 500 500
mA
Maximum latching current I
L
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 µs, T
J
= 25 °C
1000 1000