User guide

Document Number: 93901 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 22-Apr-08 1
Phase Control Thyristors
VS38ESR..M Series
Vishay High Power Products
FEATURES
Converter type thyristor
Center amplifying gate
Anode metal - molybdenum disc
ORDERING INFORMATION TABLE
PRODUCT SUMMARY
Junction size Ø 38 mm
V
RRM
class 800 to 1600 V
Passivation process Diffused junction
Reference Vishay HPP
packaged part
ST730C..L Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum on-state voltage V
TM
T
J
= 125 °C, I
T
= 2000 A 1.62
V
Maximum reverse repetitive voltage V
RRM
T
J
= 125 °C, I
RRM
= 80 mA 800 to 1600
Maximum required DC gate current to trigger I
GT
T
J
= 25 °C
200 mA
Maximum required DC gate voltage to trigger V
GT
3.0 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V, resistive load
600
mA
Typical latching current I
L
1000
MECHANICAL DATA
Nominal back metal composition (thickness) Al-Ni-Au (100 kÅ - 7 kÅ - 4 kÅ)
Nominal front metal composition Molybdenum disc
Chip dimensions Ø 38 mm (see dimensions - link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
1
- Vishay HPP device
2 - Chip dimension in millimeters
3
- Type of device: S = Converter type thyristor
4
- Passivation: R = Rubber for all junctions
5
- Voltage code x 100 = V
RRM
6
- Metallization: M = Molybdenum disc (anode)
Al-Ni-Au (cathode)
7
Available class
08 = 800 V
12 = 1200 V
14 = 1400 V
16 = 1600 V
-
Device identifier between chip with same diameter
Device code
51324
67
VS 38 E S R 16 M
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95162