Manual

Document Number: 93888 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 31-Mar-08 1
Standard Recovery Diodes
VS207DM..CCB Series
Vishay High Power Products
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
Note
(1)
Nitrogen flow on die edge
ORDERING INFORMATION TABLE
PRODUCT SUMMARY
Junction size Rectangular 207 x 157 mils
Wafer size 4"
V
RRM
class 800/1200 V
Passivation process Glassivated MOAT
Reference Vishay HPP
packaged part
20ETS Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
FM
T
J
= Ambient, I
F
= 20 A 1100 mV
Maximum repetitive reverse voltage V
RRM
(1)
T
J
= Ambient, I
RRM
= 100 µA 800/1200 V
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (20 µm)
Chip dimensions 207 x 157 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 300 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
Device code
1 - Vishay HPP device
2 - Chip dimension in mils
3 - Type of device: D = Wire bondable standard recovery diode
4 - Passivation process: M = Glassivated MOAT
5 - Voltage code x 100 = V
RRM
6 - Metallization: C = Aluminum (anode) - silver (cathode)
7 - CB = Probed uncut die (wafer in box)
None = Probed die in chip carrier
Available class
08 = 800 V
12 = 1200 V
5132467
VS 207 D M 12 C CB
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95156