Manual

Document Number: 93880 For technical questions, contact: [e-mail]
www.vishay.com
Revision: 27-Mar-08 1
Standard Recovery Diodes
VS080DM12CCB
Vishay High Power Products
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
Note
(1)
Nitrogen flow on die edge
ORDERING INFORMATION TABLE
PRODUCT SUMMARY
Junction size Square 80 x 80 mils
Wafer size 4"
V
RRM
class 1200 V
Passivation process Glassivated MOAT
Reference Vishay HPP
packaged part
4EWS..S Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
FM
T
J
= 25 °C, I
F
= 4 A 1.1
V
Maximum repetitive reverse voltage V
RRM
(1)
T
J
= 25 °C, I
RRM
= 10 µA 1200
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (5 µm)
Chip dimensions 80 x 80 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 290 µm ± 10 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination
Device code
1 - Vishay HPP device
2 - Chip dimension in mils
3 - Type of device: D = Wire bondable standard recovery diode
4 - Passivation process: M = Glassivated MOAT
5
- Voltage code x 100 = V
RRM
6
- Metallization: C = Aluminum (anode) - silver (cathode)
7
- CB = Probed uncut die (wafer in box)
None = Probed die in chip carrier
5132467
VS 080 D M 12 C CB
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95151
Packaging information http://www.vishay.com/doc?95166