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VS-UFL130FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max.
VS-UFL130FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 60 A Forward voltage VFM Reverse leakage current IRM Junction capacitance CT MIN. TYP. MAX. 600 - - - 1.29 1.60 IF = 60 A, TJ = 125 °C - 1.13 1.35 IF = 120 A - 1.49 1.88 UNITS V IF = 120 A, TJ = 125 °C - 1.37 1.68 VR = VR rated - 0.
VS-UFL130FA60 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 T = 175 °C T = 125 °C T = 25 °C 10 1 TJ = 175 °C 100 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 0 0.5 1 1.5 2 2.5 3 3.5 0 100 200 300 400 500 600 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
VS-UFL130FA60 www.vishay.com Vishay Semiconductors 250 VR = 200 V 150 200 125 75 150 50 IF = 50 A, 25 °C 100 Square wave (D = 0.50) Rated VR applied 25 0 0 20 40 60 80 100 120 50 100 140 1000 IF - Continuous Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs.
VS-UFL130FA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.
VS-UFL130FA60 www.vishay.
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