User Manual

VS-UFB80FA60
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-11
2
Document Number: 93642
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ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 600 - -
V
Forward voltage V
FM
I
F
= 30 A - 1.32 1.69
I
F
= 60 A - 1.52 1.9
I
F
= 30 A
T
J
= 125 °C
- 1.14 1.39
I
F
= 60 A - 1.38 1.66
Reverse leakage current I
RM
V
R
= V
R
rated - 0.1 50 μA
T
J
= 175 °C, V
R
= V
R
rated - 0.2 1.0 mA
Junction capacitance C
T
V
R
= 600 V - 30 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
T
J
= 25 °C
I
F
= 1 A
dI
F
/dt = 200 A/μs
V
R
= 30 V
-34-
ns
T
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-79-
T
J
= 125 °C - 155 -
Peak recovery current I
RRM
T
J
= 25 °C - 6 -
A
T
J
= 125 °C - 14 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 234 -
nC
T
J
= 125 °C - 1085 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 1.02
°C/WJunction to case, both leg conducting - - 0.51
Case to heatsink R
thCS
Flat, greased surface - 0.10 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227