User Manual

VS-UFB80FA40
www.vishay.com
Vishay Semiconductors
Revision: 21-Oct-11
2
Document Number: 93620
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 400 - -
V
Forward voltage V
FM
I
F
= 30 A - 1.14 1.39
I
F
= 30 A, T
J
= 175 °C - 0.91 1.04
Reverse leakage current I
RM
V
R
= V
R
rated - - 50 μA
T
J
= 175 °C, V
R
= V
R
rated - - 1 mA
Junction capacitance C
T
V
R
= 200 V - 68 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 32 -
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-68-
T
J
= 125 °C - 125 -
Peak recovery current I
RRM
T
J
= 25 °C - 6.8 -
A
T
J
= 125 °C - 15 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 215 -
nC
T
J
= 125 °C - 900 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
--1.0
°C/WJunction to case, both leg conducting - - 0.50
Case to heatsink R
thCS
Flat, greased surface - 0.10 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227