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VS-UFB80FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 80 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max.
VS-UFB80FA40 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. UNITS 400 - - IF = 30 A - 1.14 1.39 IF = 30 A, TJ = 175 °C - 0.91 1.
VS-UFB80FA40 Vishay Semiconductors 1000 1000 TJ = 175 °C 100 TJ = 175 °C TJ = 25 °C 10 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 1 10 1 0.1 0.01 TJ = 25 °C 0.001 0 0.5 1 1.5 2 0 2.5 100 200 300 400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
VS-UFB80FA40 www.vishay.com Vishay Semiconductors 150 140 150 120 110 100 DC 75 Square Wave (D = 0.5) Rated VR applied 50 TJ = 125 °C 100 90 80 70 25 TJ = 25 °C 60 50 100 0 0 20 40 60 80 100 120 1000 IF(AV) - Average Forward Current (A) dIF/dt (ns) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs.
VS-UFB80FA40 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.
VS-UFB80FA40 www.vishay.
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