User Manual

VS-UFB80FA20
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-11
2
Document Number: 93607
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 200 - -
V
Forward voltage V
FM
I
F
= 30 A - 0.96 1.08
I
F
= 30 A, T
J
= 175 °C - 0.77 0.89
Reverse leakage current I
RM
V
R
= V
R
rated - - 50 μA
T
J
= 175 °C, V
R
= V
R
rated - - 1 mA
Junction capacitance C
T
V
R
= 200 V - 119 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 27 -
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 100 V
-34-
T
J
= 125 °C - 53 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.5 -
A
T
J
= 125 °C - 7.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 53 -
nC
T
J
= 125 °C - 184 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
--1
°C/WJunction to case, both leg conducting - - 0.5
Case to heatsink R
thCS
Flat, greased surface - 0.10 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227