Owner manual

VS-UFB280FA20
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Vishay Semiconductors
Revision: 04-Nov-11
3
Document Number: 93463
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Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
1
10
T
J
= 175 °C
T
J
= 25 °C
0.2
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1000
0.4 0.8 1.2 1.40.6 1.0
0.01
0.1
1
10
100
0 100 150
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
200
50
0.001
1000
T
J
= 175 °C
T
J
= 25 °C
1000
1 10 100 1000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10 000
0.01
0.1
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
DC
Single pulse
(thermal resistance)
10