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VS-UFB280FA20 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max.
VS-UFB280FA20 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 200 - - IF = 120 A - 1.0 1.1 UNITS V IF = 120 A, TJ = 175 °C - 0.8 0.95 VR = VR rated - 2 50 μA TJ = 175 °C, VR = VR rated - 0.65 2 mA VR = 200 V - 200 - pF MIN. TYP. MAX.
VS-UFB280FA20 Vishay Semiconductors 1000 1000 TJ = 175 °C 100 TJ = 175 °C TJ = 25 °C 10 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 10 1 TJ = 25 °C 0.1 0.01 1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 100 50 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Fig. 2 - Typical Values of Reverse Current vs.
VS-UFB280FA20 www.vishay.com Vishay Semiconductors 70 150 125 50 100 DC 75 40 30 50 Square wave (D = 0.50) Rated VR applied 25 IF = 150 A IF = 75 A 20 See note (1) 10 100 0 0 40 80 120 160 200 240 280 320 360 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs.
VS-UFB280FA20 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.
VS-UFB280FA20 www.vishay.
Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.
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