User Manual

VS-UFB201FA40
www.vishay.com
Vishay Semiconductors
Revision: 29-Nov-11
2
Document Number: 93793
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 400 - -
V
Forward voltage V
FM
I
F
= 100 A - 1.33 1.59
I
F
= 100 A, T
J
= 125 °C - 1.19 1.28
I
F
= 200 A - 1.56 1.91
I
F
= 200 A, T
J
= 125 °C - 1.49 1.64
Reverse leakage current I
RM
V
R
= V
R
rated - 0.20 50 μA
T
J
= 175 °C, V
R
= V
R
rated - 0.40 2 mA
Junction capacitance C
T
V
R
= 400 V - 76 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 40 -
nsT
J
= 25 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-80-
T
J
= 125 °C - 160 -
Peak recovery current I
RRM
T
J
= 25 °C - 7 -
A
T
J
= 125 °C - 16 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 310 -
nC
T
J
= 125 °C - 1300 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 0.56
°C/WJunction to case, both leg conducting - - 0.28
Case to heatsink R
thCS
Flat, greased surface - 0.075 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227