6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
VS-UFB201FA40 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high junction temperature (TJ max.
VS-UFB201FA40 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 100 A Forward voltage VFM Reverse leakage current IRM Junction capacitance CT MIN. TYP. MAX. 400 - - - 1.33 1.59 IF = 100 A, TJ = 125 °C - 1.19 1.28 IF = 200 A - 1.56 1.91 UNITS V IF = 200 A, TJ = 125 °C - 1.49 1.64 VR = VR rated - 0.
VS-UFB201FA40 Vishay Semiconductors 1000 1000 TJ = 175 °C TJ = 175 °C 100 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 °C TJ = 25 °C 10 TJ = 125 °C 10 1 0.1 0.01 TJ = 25 °C 0.001 1 0 0.5 1 1.5 2 0 2.5 50 100 150 200 250 300 350 400 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
VS-UFB201FA40 Vishay Semiconductors 175 250 150 225 125 °C 175 100 DC 75 IF = 50 A 150 IF = 25 A 125 Square wave (D = 0.50) 80 % Rated VR applied 50 100 25 °C 25 see note 75 (1) 0 50 0 40 80 120 160 200 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 7 - Typical Reverse Recovery Time vs.
VS-UFB201FA40 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.
VS-UFB201FA40 www.vishay.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
