Instruction Manual
VS-UFB130FA60
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-11
4
Document Number: 93657
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical Stored Current vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
0
25
50
75
100
125
150
175
0 20406080100120140
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
DC
Square wave (D = 0.5)
Rated V
R
applied
Average Forward Current - I
F(AV)
(A)
DC
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0 20 40 60 80 100 120 140 160
Average Power Loss (W)
D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50
RMS Limit
t
rr
(ns)
dI
F
/dt (A/µs)
100 1000
V
R
= 200 V
I
F
= 50 A, 25 °C
I
F
= 50 A, 125 °C
50
100
150
200
250
Q
rr
(nC)
dI
F
/dt (A/µs)
100 1000
I
F
= 50 A, T
J
= 125 °C
I
F
= 50 A, T
J
= 25 °C
0
500
1000
1500
2000
2500
V
R
= 200 V
I
rr
(A)
dI
F
/dt (A/μs)
V
R
= 200 V
I
F
= 50 A, 125 °C
I
F
= 50 A, 25 °C
1000100
0
5
10
15
20
25
30
35