Instruction Manual
VS-UFB130FA60
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-11
2
Document Number: 93657
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 600 - -
V
Forward voltage V
FM
I
F
= 60 A - 1.43 1.80
I
F
= 60 A, T
J
= 125 °C - 1.23 1.48
I
F
= 120 A - 1.66 2.10
I
F
= 120 A, T
J
= 125 °C - 1.50 1.82
Reverse leakage current I
RM
V
R
= V
R
rated - 0.1 50 μA
T
J
= 175 °C, V
R
= V
R
rated - 0.20 1 mA
Junction capacitance C
T
V
R
= 600 V - 43 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 37 -
nsT
J
= 25 °C
I
F
= 50 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-79-
T
J
= 125 °C - 164 -
Peak recovery current I
RRM
T
J
= 25 °C - 6 -
A
T
J
= 125 °C - 15 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 230 -
nC
T
J
= 125 °C - 1220 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 0.73
°C/WJunction to case, both leg conducting - - 0.365
Case to heatsink R
thCS
Flat, greased surface - 0.10 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227