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VS-HFA90FA120 www.vishay.
VS-HFA90FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr Peak recovery current TYP. MAX. - 35 - TJ = 25 °C - 80 - TJ = 125 °C - 130 - IF = 40 A TJ = 25 °C IRRM Reverse recovery charge MIN. IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 6.8 - - 11.5 - TJ = 25 °C - 270 - TJ = 125 °C - 740 - MIN. TYP. MAX.
VS-HFA90FA120 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.75 D = 0.50 0.1 D = 0.33 D = 0.25 D = 0.20 PDM t1 DC 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.001 0.0001 0.001 0.01 0.
VS-HFA90FA120 www.vishay.com Vishay Semiconductors 1500 200 IF = 40 A IF = 40 A 1250 125 °C IF = 20 A IF = 20 A 1000 Qrr (nC) trr (ns) 150 VR = 200 V VR = 200 V 100 25 °C 750 125 °C 500 50 250 25 °C 0 0 100 1000 100 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt 30 VR = 200 V IF = 40 A 20 IRR (A) IF = 20 A 10 125 °C 25 °C 0 100 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery Current vs.
VS-HFA90FA120 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current.
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