Manual

VS-HFA70FA120
www.vishay.com
Vishay Semiconductors
Revision: 29-Feb-12
4
Document Number: 94289
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Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Typical Reverse Recovery Current vs. dI
F
/dt
Fig. 10 - Reverse Recovery Parameter Test Circuit
0
50
100
150
200
250
0001001
t
rr
(ns)
dI
F
/dt (A/μs)
I
F
= 30 A
125 °C
V
R
= 200 V
25 °C
I
F
= 50 A
0
500
1000
1500
2000
2500
3000
0001001
Q
rr
(nC)
dI
F
/dt (A/μs)
I
F
= 30 A
125 °C
V
R
= 200 V
25 °C
I
F
= 50 A
0
5
10
15
20
25
30
35
0001001
I
rr
(nC)
dI
F
/dt (A/μs)
I
F
= 30 A
125 °C
V
R
= 200 V
25 °C
I
F
= 50 A
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust