User guide

VS-HFA70EA120
www.vishay.com
Vishay Semiconductors
Revision: 20-Jul-12
2
Document Number: 94747
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time, per leg t
rr
I
F
= 1 A; dI
F
/dt = 200 A/μs; V
R
= 30 V - 48 -
nsT
J
= 25 °C
I
F
= 50 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
- 145 -
T
J
= 125 °C - 218 -
Peak recovery current, per leg I
RRM
T
J
= 25 °C - 13 -
A
T
J
= 125 °C - 19 -
Reverse recovery charge, per leg Q
rr
T
J
= 25 °C - 910 -
nC
T
J
= 125 °C - 1920 -
Junction capacitance, per leg C
T
V
R
= 1200 V - 27 - pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
--0.35
°C/WJunction to case, both legs conducting - - 0.175
Case to heatsink, per leg R
thCS
Flat, greased and surface - 0.05 -
Weight -30- g
Mounting torque, on terminals and heatsink T - - 1.3 Nm