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VS-HFA220FA120 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 220 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.
VS-HFA220FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A dIF/dt = - 200 A/μs VR = 30 V TJ = 25 °C Reverse recovery time trr Reverse recovery charge Qrr Junction capacitance CT IF = 50 A TJ = 25 °C IRRM dIF/dt = - 200 A/μs TJ = 125 °C TYP. MAX. - 58 - - 157 - - 255 - - 15 - - 22.5 - UNITS ns TJ = 25 °C TJ = 125 °C Peak recovery current MIN.
VS-HFA220FA120 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 PDM 0.1 t1 0.75 0.50 0.33 0.25 0.20 DC 0.01 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig.
VS-HFA220FA120 www.vishay.com Vishay Semiconductors 1000 50 CT - Junction Capacitance (pF) VR = 200 V IRR (A) 40 30 IF = 50 A, TJ = 125 °C 20 10 IF = 50 A, TJ = 25 °C 100 10 0 100 10 1000 100 1000 10 000 dIF/dt (A/μs) VR - Reverse Voltage (V) Fig. 8 - Typical Peak Recovery Current vs. dIF/dt Fig. 9 - Typical Junction Capacitance vs. Reverse Voltage Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig.
VS-HFA220FA120 www.vishay.
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