6121 Baker Road, Suite 108 Minnetonka, MN 55345 Phone (952) 933-6190 Fax (952) 933-6223 1-800-274-4284 www.chtechnology.com Thank you for downloading this document from C&H Technology, Inc. Please contact the C&H Technology team for the following questions - Technical Application Assembly Availability Pricing Phone – 1-800-274-4284 E-Mail – sales@chtechnology.com www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.
VS-HFA140FA120 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 140 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly • Designed and qualified for industrial level • UL approved file E78996 SOT-227 • Material categorization: For definitions of compliance please see www.vishay.
VS-HFA140FA120 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V Reverse recovery time, per leg Peak recovery current, per leg trr IRRM Reverse recovery charge, per leg Qrr Junction capacitance, per leg CT MIN. TYP. MAX.
VS-HFA140FA120 Vishay Semiconductors 10 000 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.5 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 200 400 600 800 1000 1200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
VS-HFA140FA120 Vishay Semiconductors 300 175 IF = 50 A VR = 200 V 150 250 125 TJ = 125 °C 100 trr (ns) Allowable Case Temperature (°C) www.vishay.com DC 75 Square wave (D = 0.50) 80 % rated VR applied 50 150 TJ = 25 °C 100 25 0 0 20 40 60 80 100 50 100 120 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs.
VS-HFA140FA120 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.
VS-HFA140FA120 www.vishay.
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.