Instruction Manual

VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
3
Document Number: 94824
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature T
J
- - 175 °C
Storage temperature range T
Stg
- 40 - 125 °C
Junction to case
IGBT
R
thJC
- - 0.37
K/WDiode - - 0.49
Case to sink (Conductive grease applied) R
thCS
-0.05-
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight Weight of module - 150 - g
0
10
20
30
40
50
60
70
80
90
100
25 °C
175 °C
V
CE
(V)
I
C
(A)
01 234
V
GE
= 15 V
02 64 8 10 12
V
GE
(V)
I
C
(A)
V
CE
= 50 V
0
10
20
30
40
50
60
70
80
90
100
175 °C
25 °C
025 7550 100
I
C
(A)
E (mJ)
0
2
4
6
8
10
12
14
16
18
20
V
GE
= ± 15 V
T
J
= 125 °C
R
g
=15 Ω
V
CC
= 600 V
E
off
E
on
R
g
( Ω )
E
(mJ)
010 3020 40 50 60
0
8
4
2
6
10
12
14
16
18
20
E
on
E
off
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 50 A
V
CC
= 600 V