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VS-GT50TP120N www.vishay.
VS-GT50TP120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.90 2.35 VGE = 15 V, IC = 50 A, TJ = 175 °C - 2.50 - UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 1.4 mA, TJ = 25 °C 5.0 5.5 7.
VS-GT50TP120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ - - 175 °C TStg - 40 - 125 °C - - 0.37 - - 0.49 - 0.05 - Operating junction temperature Storage temperature range TEST CONDITIONS IGBT Junction to case RthJC Diode Case to sink (Conductive grease applied) RthCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.
VS-GT50TP120N www.vishay.com Vishay Semiconductors 120 Chip 100 Module IC (A) 80 60 40 Rg = 15 Ω VGE = ± 15 V TJ = 125 °C 20 0 0 350 700 1050 1400 VCE (V) Fig. 5 - RBSOA 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-3 10-2 10-1 10-0 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 100 3.5 90 80 2 Erec 25 °C 70 60 125 °C E (mJ) IF (A) 2.5 VCC = 600 V Rg = 15 Ω VGE = - 15 V TJ = 125 °C 3 50 40 1.5 30 1 20 0.5 10 0 0 1 2 3 0 0 25 50 75 VF (V) IF (A) Fig.
VS-GT50TP120N www.vishay.com Vishay Semiconductors 3 2.5 E (mJ) 2 Erec 1.5 1 VCC = 600 V IF = 50 A VGE = - 15 V TJ = 125 °C 0.5 0 0 10 20 30 40 50 60 Rg (Ω) Fig. 9 - Diode Switching Loss vs. RG 100 ZthJC (K/W) Diode 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions Revision: 17-May-13 www.vishay.
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